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ESTIMATION OF CRYSTALLITE SIZE BY XRD ANALYSIS OF AS SYNTHESIZED BI2S3 BY CONVENTIONAL HIGH TEMPERATURE SOLID STATE SOLVOTHERMAL ROUTE

Bismuth sulfide chalcogenide was successfully synthesized inside the ampoule by conventional high temperature solid state solvothermal reaction of bismuth and sulfur. It was prepared by adjusting stoichiometric amount of the bismuth and sulfur heated in evacuated sealed quartz ampoule at 850 °C for 12h. Based on XRD principles, numerous approaches such as use of Scherrer equation, Hall – Williamson method for crystallite size estimation of  Bi2Spowder.

F.MIS-SIM 1.0: A Program For Simulation Of Metal-Insulating-Si(N) Photovoltaic Structures

A simulation program for MIS photovoltaic cells has been developed under «Visual Basic 5» language that will be a useful tool for the researchers working on this type of structures. This Microsoft Windows based program can be used to analyse individual cells especially the effect of physical and geometrical parameters, heating and illuminating on the solar cell performance. This paper describes the simulation program and illustrates its versatility.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE NANOPARTICLES

Structure of calcinated TiO2 has been examined by X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) analysis. The formation of the single phase TiO2 was confirmed by X-ray diffraction (XRD) and the structural parameters were refined by the Rietveld analysis. A good agreement between observed and calculated X-ray diffraction pattern was obtained from the Rietveld refinement using space group I 41/ amd. The calculated unit cell parameters are used to plot the structure.

A Software To Calculate Crystalline Size By Debye-Scherrer Formula Using VB.NET

X-Ray diffraction is a tool for the investigation of the fine structure of matter. Initially X-Ray diffraction was used only for the determination of crystal structure but now a days the data from X-ray diffraction have also been  used to determine the crystalline size using Debye-Scherrer formula.  Generally one has to deal with limited data because of laborious and time consuming manual methods of calculation. Sometime calculations with lots of data are required in order to determine different crystalline sizes for the statistical analysis or other applications.

EXTRACTION BIAS DEPENDENT PARAMETERS OF NON IDEAL SCHOTTKY DIODE

More than three decades Schottky diodes (rectifying contacts) are widely used in power industry. It is a majority carrier device where minority carrier storage is usually not important. As a result Schottky device have very high switching speeds with minor forward voltage drop making them ideal for output stages of switching power supplies.  Here in this paper the In/p-Si Schottky diode showed non ideal I-V behaviour with an ideality factor 2.12. It may be thought a metal-interface layer-semiconductor (MIS) configuration.