More than three decades Schottky diodes (rectifying contacts) are widely used in power industry. It is a majority carrier device where minority carrier storage is usually not important. As a result Schottky device have very high switching speeds with minor forward voltage drop making them ideal for output stages of switching power supplies.  Here in this paper the In/p-Si Schottky diode showed non ideal I-V behaviour with an ideality factor 2.12. It may be thought a metal-interface layer-semiconductor (MIS) configuration. The I-V characteristics are used to evaluating bias dependent parameters series resistance R_S, barrier height  f_b and ideality factor n and interface state density N_ss of non ideal In/p-Si Schottky diode with the interfacial oxide layer.

PACS Nos. 73.30+y / 73.20 -r.